A sub-class of Si spin qubits uses metal-oxide-semiconductor (MOS) quantum dots to confine the electrons, a structure that ...
Over the past decades, engineers have introduced numerous technologies that rely on light and its underlying characteristics.
At the 2025 IEEE International Electron Devices Meeting (IEDM), research centre Imec is presenting breakthrough performance of p-type FETs with monolayer WSe 2 channels, and improved fab-compatible ...
Deep vertical holes and re-entrant features challenge the best metrology methods.
CMOS-built optical phase modulators shrink laser control hardware and power use for trapped atom quantum computers, enabling ...
What many engineers once saw as a flaw in organic electronics could actually make these devices more stable and reliable, ...
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New materials could boost the energy efficiency of microelectronics
MIT researchers have developed a new fabrication method that could enable the production of more energy efficient electronics ...
I attended an AI conference in Seattle and participated in the 2025 IEDM and its celebration of the 100th anniversary of the ...
Abstract: This letter reports the bias temperature instabilities (BTI) of 4H-SiC CMOS devices with different gate lengths (L) and gate widths (W) for integrated circuits at 400 °C for the first time.
Abstract: An E-band low-noise amplifier (LNA) is proposed for 6G applications. It employs three cascode amplifier stages, each utilizing a gate-drain transformer as the load. To extend the gain ...
This repo deals with the construction of a 2-input XOR gate using CMOS Skywater 130nm technology in xschem & obtaining its parameters through pre-layout simulation using ngspice.
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