At the IEEE International Electron Devices Meeting being held this week, Leuven, Belgium-based nanotechnology research center IMEC is reporting significant progress in improving the performance of ...

IMEC, the Belgium-based nanotechnology research center, announced at this week's VLSI Symposium that it has improved the performance of its planar CMOS using hafnium-based, high-k dielectrics and ...

LONDON — Belgian research organization IMEC has presented on a scheme to use fully-silicided (FUSI) nickel-silicide metal gates with high-k dielectric CMOS transistors at the International Electron ...

AUSTIN, USA: Building on their successful CMOS solution for gate-first, thermally stable, high-k dual metal gates, SEMATECH researchers have released further data that portends a new era in which ...

28nm Super Low Power is the low power CMOS offering delivered on a bulk silicon substrate for mobile consumer and digital consumer applications. The 28nm process technology is slated to become the ...

SYDNEY, AUSTRALIA – AUGUST 20, 2024 – Quantum computing company Diraq announced it has demonstrated consistent and repeatable operation with above 99 percent fidelity of two-qubit gates in the SiMOS ...

Gordon Moore's prediction made over 40 years ago, that the number of transistors in an integrated circuit would double roughly every 24 months, continues to be the guiding principle of the ...

Since its inception, BCD technology has leveraged the integration of two primary technologies—polysilicon gate CMOS and DMOS power architecture—on the same chip. Its compatibility with bipolar ...